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| schottky barrier diode features: extra small power mold type. low vf high reliability marking: 3d maximum ratings @t a =25 parameter symbol limits unit peak reverse voltage v rm 40 v dc reverse voltage v r 40 v peak forward surge current i fsm 200 ma average forward current i o 30 ma power dissipation p d 200 mw junction temperature t j 125 storage temperature t stg -40-125 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit reverse voltage leakage current i r v r =10v 1 a forward voltage v f i f =1ma 0.37 v capacitance between terminals c t v r =1v, f=1mhz 2.0 pf sot-323 RB715F 1 date:2011/05 www.htsemi.com semiconductor jinyu
RB715F typical characteristics 2 date:2011/05 www.htsemi.com semiconductor jinyu |
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